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Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

(8) Chung, H J a Polyakov, A Y a Huh, S W a Nigam, S a Skowronski, M a Fanton, M A b Weiland, B E b Snyder, D W b

a CARNEGIE MELLON UNIVERSITY (United States)

b PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL SPECTRA; ELECTRON TRAP DENSITY; HIGH VOLTAGE RECTIFIERS; PHYSICAL VAPOR TRANSPORT (PVT);

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRON TRAPS; EPITAXIAL GROWTH; FERMI LEVEL; FIELD EFFECT TRANSISTORS; IMPURITIES; SILICON CARBIDE; STOICHIOMETRY;

SINGLE CRYSTALS;

EID: 21544479762 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1865317 Document Type: Article

Times cited : (42)

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