Growth kinetics and thermal stress in AlN bulk crystal growth

Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 326-339

  Wu, Bei ^a   Ma, Ronghui ^a   Zhang, Hui ^a   Dudley, Michael ^b   Schlesser, Raoul ^c   Sitar, Zlatko ^c  

^a Stony Brook University   (United States)

^b STONY BROOK UNIVERSITY   (United States)

^c North Carolina State University   (United States)

Author keywords

A1. Computer simulation; A1. Growth models; A2. Growth from vapor; A2. Single crystal growth; A3.Chemical vapor deposition processes; B1. Nitrides

Indexed keywords

BOUNDARY CONDITIONS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; ENERGY CONSERVATION; LIGHT EMITTING DIODES; REACTION KINETICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SHEAR STRESS; THERMAL GRADIENTS; THERMAL STRESS; X RAY ANALYSIS;

MASS CONSERVATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037610822     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01044-3     Document Type: Article

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