Dislocations in silicon and D-band luminescence for infrared light emitters

Materials Science Forum

Volumn 590, Issue , 2008, Pages 29-56

  Kveder, V ^a   Kittler, M ^b,c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b IHP   (Germany)

^c BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

D band luminescence; Dislocations; LED; Silicon

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; LIGHT EMITTING DIODES; LUMINESCENCE; SILICON;

DISLOCATION RELATED LUMINESCENCES; GROWING DEMAND; INFRARED LIGHT EMITTERS; INFRARED LIGHT EMITTING DIODES; LIGHT EMITTERS; SI-LEDS; SILICON CHIP; SILICON-BASED LIGHT EMITTERS;

LIGHT;

EID: 64749098568     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.590.29     Document Type: Article

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