Electrical effects of point defect clouds at dislocations in silicon, studied by deep level transient spectroscopy

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 213-218

  Schroter W ^a   Kveder, V ^a   Hedemann, H ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Dislocations; DLTS; Electrical properties; Point defect clouds; Silicon

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTROMAGNETIC FIELD EFFECTS; LOW TEMPERATURE EFFECTS; POINT DEFECTS;

LOW TEMPERATURE TAILS; POINT DEFECT CLOUDS; SYMMETRICAL BROADENING;

SEMICONDUCTING SILICON;

EID: 0036131296     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (18)

1. Dislocations
2. Band structure and bandgaps in strained bulk c-Si