Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  McHedlidze, T ^b   Arguirov, T ^a   Kittler, M ^a   Hoang, T ^c   Holleman, J ^c   Schmitz, J ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DISLOCATIONS (CRYSTALS); ELECTRIC FIELD EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON; TUNING;

CARRIER INJECTION LEVEL; DISLOCATION SITES; DISLOCATION-RELATED LUMINESCENCE (DRL); EXCITONIC TRANSITION ENERGIES; QUADRATIC STARK EFFECT (QSE);

LUMINESCENCE;

EID: 36248953126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2813024     Document Type: Article

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