Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current

Journal of Applied Physics

Volumn 93, Issue 2, 2003, Pages 1069-1074

  Knobloch, Klaus ^a,b   Kittler, Martin ^a   Seifert, Winfried ^a  

^a IHP   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; GOLD; SILICON;

ELECTRON-BEAM-INDUCED CURRENTS (EBIC);

DISLOCATIONS (CRYSTALS);

EID: 0037439808     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1532938     Document Type: Article

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