Silicon-based light emission after ion implantation

Optical Materials

Volumn 27, Issue 5, 2005, Pages 967-972

  Kittler, M ^a,b   Arguirov, T ^b   Fischer, A ^a   Seifert, W ^a,b  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; HALL EFFECT; ION IMPLANTATION; LIGHT EMITTING DIODES; PHOSPHORUS; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SILICON;

BAND GAPS; INTERNAL QUANTUM EFFICIENCY; MODULATION FREQUENCY; TRANSVERSE OPTICAL (TO) PHONONS;

LIGHT EMISSION;

EID: 13444267712     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.045     Document Type: Conference Paper

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