Influence of dislocation loops on the near-infrared light emission from silicon diodes

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1860-1866

  Hoang, Tu ^a   Holleman, Jisk ^a   LeMinh, Phuong ^a   Schmitz, Jurriaan ^a   Mchedlidze, Teimuraz ^b   Arguirov, Tzanimir ^b,c   Kittler, Martin ^b,c  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c IHP   (Germany)

Author keywords

Dislocation loops; Integrated optics; Integrated optoelectronics; Light sources; Light emitting diodes (LEDs); Luminescent devices; Optoelectronic devices; Semiconductor device fabrication; Semiconductor devices; Silicon

Indexed keywords

ELECTROLUMINESCENCE; INTEGRATED OPTICS; ION IMPLANTATION; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENT DEVICES; NEAR INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE;

DIODE JUNCTION; DISLOCATION LOOPS;

SEMICONDUCTING SILICON;

EID: 34547917145     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901072     Document Type: Article

References (25)

1. L. Pavesi, "Will silicon be the photonic material of the third millennium?" J. Phys., Condens. Matter, vol. 15, no. 26, pp. R1169-R1196, Jul. 2003.
2. M. A. Green, J. Zhao, A. Wang, P. J. Reece, and M. Gal, "Efficient silicon light-emitting diodes," Nature, vol. 412, no. 6849, pp. 805-808, Aug. 2001.
3. D. K. Schroder, "Carrier lifetimes in silicon," IEEE Trans. Electron Devices, vol. 44, no. 1, pp. 160-170, Jan. 1997.
4. T. Trupke, J. Zhao, A. Wang, R. Corkish, and M. A. Green, "Very efficient light emission from bulk crystalline silicon," Appl. Phys. Lett., vol. 82, no. 18, pp. 2996-2998, May 2003.
5. M. Kittler, M. Reiche, T. Arguirov, W. Seifert, and X. Yu, "Silicon-based light emitters," Phys. Stat. Sol. A, vol. 203, no. 4, pp. 802-809, 2006.
6. N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, "Recombination radiation on dislocations in silicon," JETP Lett., vol. 23, pp. 597-599, 1976.
7. W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, "An efficient room-temperature silicon-based light-emitting diode," Nature, vol. 410, no. 6825, pp. 192-194, Mar. 2001.
8. V. Kveder et al., "Room-temperature silicon light-emitting diodes based on dislocation luminescence," Appl. Phys. Lett., vol. 84, no. 12, pp. 2106-2108, Mar. 2004.
9. T. Hoang, P. LeMinh, J. Holleman, and J. Schmitz, "The effect of dislocation loops on the light emission of silicon LEDs," IEEE Electron Device Lett., vol. 27, no. 2, pp. 105-107, Feb. 2006.
10. M. Kittler et al., "Dislocation engineering for a silicon-based light emitter at 1.5 μm," in IEDM Tech. Dig., 2005, pp. 1027-1030.
11. N. E. B. Cowern, K. T. F. Janssen, and H. F. F. Jos, "Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles," J. Appl. Phys., vol. 68, no. 12, pp. 6191-6198, Dec. 1990.
12. + ion implantation," J. Appl. Phys., vol. 81, p. 6031, 1997.
13. K. S. Jones, S. Prussin, and E. R. Weber, "A systematic analysis of defects in ion-implanted silicon," Appl. Phys. A, Solids Surf., vol. 45, no. 1, pp. 1-34, Jan. 1988.
14. G. Z. Pan, K. N. Tu, and A. Prussin, "Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon," J. Appl. Phys., vol. 81, no. 1, pp. 78-84, Jan. 1997.
15. G. L. Pearson and J. Bardeen, "Electrical properties of pure silicon alloys containing boron and phosphorus," Phys. Rev., vol. 75, no. 5, pp. 865-883, Mar. 1949.
16. S. M. Sze, Semiconductor Devices: Physics and Technology. New York: Wiley, 1985.
17. D. J. Stowe, S. A. Galloway, S. Senkader, K. Mallik, R. J. Falster, and P. R. Wilshaw, "Near-band gap luminescence at room temperature from dislocations in silicon," Phys. B, vol. 340-342, pp. 710-713, 2003.
18. M. Suezawa and K. Sumino, "The nature of photoluminescence from plastically deformed silicon," Phys. Stat. Sol. A, vol. 78, no. 2, p. 639, 1983.
19. E. Ö. Sveinbjörnsson and J. Weber, "Room temperature electroluminescence from dislocation-rich silicon," Appl. Phys. Lett., vol. 69, no. 18, pp. 2686-2688, Oct. 1996.
20. V. Kveder, M. Kittler, and W. Schröter, "Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior," Phys. Rev. B, Condens. Matter, vol. 63, no. 11, p. 115 208, 2001.
21. J. Liu, M. E. Law, and K. S. Jones, "Evolution of dislocation loops in silicon in an inert ambient - I," Solid State Electron., vol. 38, no. 7, pp. 1305-1312, Jul. 1995.
22. M. Kittler, T. Arguirov, A. Fischer, and W. Seifert, "Silicon-based light emission after ion implantation," Opt. Mater., vol. 27, no. 5, pp. 967-972, Feb. 2005.
23. H. Schlangenotto, H. Maeder, and W. Gerlach, "Temperature dependence of the radiative recombination coefficient in silicon," Phys. Stat. Sol. A, vol. 21, no. 1, pp. 357-367, 1974.
24. C. Thurmond, "Standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs, and GaP," J. Electrochem. Soc. vol. 122, no. 8, pp. 1133-1141, Aug. 1975.
25. S. Pizzini, S. Binetti, M. Acciarri, and M. Casati, "Study of the radiative and non-radiative recombination processes at dislocations in silicon by photoluminescence and LBIC measurements," in Proc. Mater. Res. Soc. Symp., 2000, vol. 588, pp. 117-122.