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Volumn 387, Issue 6634, 1997, Pages 686-688

A silicon/iron-disllicide light-emitting diode operating at a wavelength of 1.5 μm

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

EID: 0030616229     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/42667     Document Type: Article
Times cited : (737)

References (19)
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    • Photoluminescence and photocurrent studies of Si/SiGe p-i-n heterostructures
    • Forster, M. et al. Photoluminescence and photocurrent studies of Si/SiGe p-i-n heterostructures. J. Appl. Phys. 80, 3017-3023 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 3017-3023
    • Forster, M.1
  • 3
    • 0028423199 scopus 로고
    • Room temperature sharp line luminescence at 1.5 microns from an erbium doped light emitting diode
    • Zheng, B. et al. Room temperature sharp line luminescence at 1.5 microns from an erbium doped light emitting diode. Appl. Phys. Lett. 64, 2842-2844 (1994).
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 2842-2844
    • Zheng, B.1
  • 9
    • 0027969640 scopus 로고
    • 2/Si heterostructures grown by gas source MBE
    • 2/Si heterostructures grown by gas source MBE. Mater. Res. Soc. Symp. Proc. 320, 139-144 (1994).
    • (1994) Mater. Res. Soc. Symp. Proc. , vol.320 , pp. 139-144
    • Rosen, B.N.E.1
  • 10
    • 0006785719 scopus 로고
    • A clarification of the index of refraction of beta iron disilicide
    • Bost, M. C. & Mahan, J. E. A clarification of the index of refraction of beta iron disilicide. J. Appl. Phys. 64, 2034-2037 (1988).
    • (1988) J. Appl. Phys. , vol.64 , pp. 2034-2037
    • Bost, M.C.1    Mahan, J.E.2
  • 13
    • 0021784155 scopus 로고
    • Dislocation related photoluminescence in silicon
    • Sauer, R. et al Dislocation related photoluminescence in silicon. Appl. Phys. A 36, 1-13 (1985).
    • (1985) Appl. Phys. A , vol.36 , pp. 1-13
    • Sauer, R.1
  • 14
    • 0000012442 scopus 로고
    • Optical and electrical properties of buried semiconducting beta-iron disilicide S
    • Radermacher, K., Carius, R. & Mantl, S. Optical and electrical properties of buried semiconducting beta-iron disilicide S. Nucl. Instrum. Meth. B 84, 163-167 (1994).
    • (1994) Nucl. Instrum. Meth. B , vol.84 , pp. 163-167
    • Radermacher, K.1    Carius, R.2    Mantl, S.3
  • 16
    • 0000467968 scopus 로고    scopus 로고
    • + ions into silicon
    • + ions into silicon. J. Appl. Phys. 80, 5995-5962 (1996).
    • (1996) J. Appl. Phys. , vol.80 , pp. 5995-15962
    • Katsumata, H.1
  • 18
    • 0001545858 scopus 로고
    • Optical properties and phase transformations in alpha and beta iron disilicide layers
    • Hunt, T. D. et al. Optical properties and phase transformations in alpha and beta iron disilicide layers. Nud. Instrum. Meth. B 84, 168-171 (1994).
    • (1994) Nud. Instrum. Meth. B , vol.84 , pp. 168-171
    • Hunt, T.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.