Regular dislocation networks in silicon as a tool for novel device application

ECS Transactions

Volumn 3, Issue 4, 2006, Pages 429-450

  Kittler, M ^a,b   Reiche, M ^c   Seifert, W ^a,b   Yu, X ^a,b   Arguirov, T ^a,b   Vyvenko, O F ^b   Mchedlidze, T ^b   Wilhelm, T ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATION; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTOR DEVICES; SILICON WAFERS;

CONDUCTIVE CHANNELS; COULOMB INTERACTIONS; INSULATING LAYERS; WAFER BONDING;

DISLOCATIONS (CRYSTALS);

EID: 33846999029     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355777     Document Type: Conference Paper

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