|
Volumn 131-133, Issue , 2008, Pages 175-182
|
Influence of the dislocation travel distance on the DLTS spectra of dislocations in Cz-Si
|
Author keywords
Deep level defects; Dislocations; DLTS; Silicon
|
Indexed keywords
CONCENTRATION (PROCESS);
DEFORMATION;
DISLOCATIONS (CRYSTALS);
ELECTRON TUNNELING;
IMPURITIES;
CRYSTAL IMPURITIES;
DEFECTS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON;
ATOMIC IMPURITIES;
DEEP DEFECTS;
DEEP LEVEL DEFECTS;
DISLOCATION VELOCITY;
DEEP-LEVEL DEFECTS;
DISLOCATION VELOCITIES;
DLTS SPECTRA;
SI CRYSTALS;
SLOW MOTION;
TRAVEL DISTANCE;
SEMICONDUCTING SILICON;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
|
EID: 38549178360
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (18)
|
References (18)
|