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Volumn 131-133, Issue , 2008, Pages 175-182

Influence of the dislocation travel distance on the DLTS spectra of dislocations in Cz-Si

Author keywords

Deep level defects; Dislocations; DLTS; Silicon

Indexed keywords

CONCENTRATION (PROCESS); DEFORMATION; DISLOCATIONS (CRYSTALS); ELECTRON TUNNELING; IMPURITIES; CRYSTAL IMPURITIES; DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

EID: 38549178360     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (18)
  • 5
    • 0000909291 scopus 로고    scopus 로고
    • S. Kusanagi, T. Sekiguchi, B. Shen, K. Sumino: Mater. Sci. Technology, 11 (1995), p. 685
    • S. Kusanagi, T. Sekiguchi, B. Shen, K. Sumino: Mater. Sci. Technology, 11 (1995), p. 685


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.