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Volumn 14, Issue 48, 2002, Pages 13047-13059
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Measurements of energy spectra of extended defects
b
SIEMENS AG
(Germany)
d
SILTRONIC AG
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DISLOCATIONS (CRYSTALS);
HIGH TEMPERATURE PROPERTIES;
NICKEL COMPOUNDS;
POINT DEFECTS;
STRESSES;
CORE DEFECTS;
DISLOCATION STRAIN FIELD;
ONE DIMENSIONAL BAND OF STATES;
POINT DEFECT DECORATION;
RECONSTRUCTION DEFECTS;
SEMICONDUCTING SILICON;
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EID: 0037122026
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/14/48/350 Document Type: Article |
Times cited : (41)
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References (41)
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