Room-temperature silicon light-emitting diodes based on dislocation luminescence

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2106-2108

  Kveder, V ^a   Badylevich, M ^a   Steinman, E ^a   Izotov, A ^a   Seibt, M ^b   Schroter W ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; OPTIMIZATION; PASSIVATION; PHOTONS; SILICON; THERMAL EFFECTS;

OPTICAL EMITTERS; RECOMBINATION LIFETIME;

LIGHT EMITTING DIODES;

EID: 16544378715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689402     Document Type: Article

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