Low-temperature oxidation of silicon surface using a gas mixture of H2 and O2 in a catalytic chemical vapor deposition system

Electrochemical and Solid-State Letters

Volumn 2, Issue 8, 1999, Pages 388-389

  Izumi, Akira ^a   Sohara, Satoshi ^a   Kudo, Manabu ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); HYDROGEN; LOW TEMPERATURE EFFECTS; OXYGEN; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

CATALYTIC CHEMICAL VAPOR DEPOSITION; CATALYTIC DECOMPOSITION; LOW TEMPERATURE OXIDATION;

THERMOOXIDATION;

EID: 0032652671     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390846     Document Type: Article

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