X-ray multiple diffraction on the shallow junction of B in Si(0 0 1)

Journal of Molecular Catalysis A: Chemical

Volumn 228, Issue 1-2 SPEC. ISS., 2005, Pages 177-182

  Orloski, R V ^a   Pudenzi, M A A ^a   Hayashi, M A ^a   Swart, J W ^a   Cardoso, L P ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

Ion implantation; Semiconductors; Shallow junction; X ray diffraction; X ray multiple diffraction

Indexed keywords

AMORPHOUS SILICON; BORON; ETCHING; HEAT TREATMENT; HETEROJUNCTIONS; INTERFACES (MATERIALS); ION IMPLANTATION;

AMORHPOUS-CRYSTALLINE INTERFACES; INTERSTITIAL ATOMS; SHALLOW JUNCTIONS; X-RAY MULTIPLE DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

BORON; SILICON;

ATOM; CONFERENCE PAPER; CRYSTAL; ENERGY; MOLECULAR PROBE; THERMAL EXPOSURE; X RAY DIFFRACTION;

EID: 12844276116     PISSN: 13811169     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.molcata.2004.09.074     Document Type: Conference Paper

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