Negative ion assisted silicon oxidation in downstream of microwave plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 5028-5032

  Koromogawa, Takashi ^a   Fujii, Takashi ^a   Yamashita, Akihito ^a   Horiike, Yasuhiro ^b   Shindo, Haruo ^a  

^a TOKAI UNIVERSITY   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

Directional oxidation; High rate silicon oxidation; Low temperature silicon oxidation; Oxygen negative ion; Silicon oxidation

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ION BEAMS; LOW TEMPERATURE EFFECTS; MICROWAVES; OXIDATION; PLASMA APPLICATIONS; PROBES; X RAY PHOTOELECTRON SPECTROSCOPY;

MICROWAVE PLASMA; NEGATIVE ION ASSISTED SILICON OXIDATION; OXYGEN NEGATIVE ION; SUBSTRATE BIAS VOLTAGE;

SEMICONDUCTING SILICON;

EID: 0032155363     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5028     Document Type: Article

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