Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 369-376

  Goghero, D ^a   Goullet, A ^a   Landesman, J P ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

Plasma processing and deposition; Silicon dioxide; TEOS (tetraethoxysilane)

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELLIPSOMETRY; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; LEAKAGE CURRENTS; MOS CAPACITORS; OXYGEN; PLASMAS; SILICON; STRESS ANALYSIS; SUBSTRATES; THIN FILMS;

OXYGEN PLASMAS; PLASMA DEPOSITION; PLASMA PROCESSING; TEOS (TETRAETHOXYSILANE);

SILICA;

EID: 12344278428     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.012     Document Type: Article

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