Contribution of interface roughness to the infrared spectra of thermally grown silicon dioxide films

Journal of Applied Physics

Volumn 85, Issue 8 I, 1999, Pages 4076-4082

  Ishikawa, Kenji ^a   Ogawa, Hiroki ^a,b   Fujimura, Shuzo ^a,c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JLM Technology Group   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; APPROXIMATION THEORY; COMPUTER SIMULATION; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LIGHT REFLECTION; MATHEMATICAL MODELS; SILICA; SURFACE ROUGHNESS;

EFFECTIVE MEDIUM APPROXIMATION; INFRARED REFLECTION ABSORPTION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032608314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370313     Document Type: Article

References (36)

1. Mau-Tsu Tang, K. W. Evans-Lutterodt, G. S. Higashi, and T. Boone, Appl. Phys. Lett. 62, 3144 (1993).
2. 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 139.
3. J. T. Fitch, C. H. Bjorkman, G. L. Lucovsky, F. H. Pollak, and X. Yin, J. Vac. Sci. Technol. B 5, 530 (1987).
4. D. W. Berreman, Phys. Rev. 130, 2193 (1963).
5. F. L. Galeener and G. Lucovsky, Phys. Rev. Lett. 37, 1474 (1976).
6. J. E. Olsen and F. Shimura, Appl. Phys. Lett. 53, 1934 (1988).
7. J. E. Olsen and F. Shimura, J. Vac. Sci. Technol. A 7, 3275 (1989).
8. J. E. Olsen and F. Shimura, J. Appl. Phys. 66, 1353 (1989).
9. T. Yamazaki, S. Miyazaki, C. H. Bjorkman, M. Fukuda, and M. Hirose, Mater. Res. Soc. Symp. Proc. 318, 419 (1994).
10. H. Ogawa, K. Ishikawa, C. Inomata, and S. Fujimura, J. Appl. Phys. 79, 472 (1996).
11. S. Fujimura, H. Ogawa, K. Ishikawa, C. Inomata, and H. Mori, Extended Abstract International Conference Solid State Devices and Material (Chiba, 1993), p. 618.
12. S. Fujimura, H. Ogawa, and K. Ishikawa, J. Vac. Sci. Technol. A 16, 375 (1998).
13. S. M. Hu, J. Appl. Phys. 51, 5945 (1980).
14. P. J. Grunthaner and F. J. Grunthaner, Mater. Sci. Rep. 65, 1 (1986).
15. W. Kern and D. Puotinen, RCA Rev. 31, 187 (1970).
16. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
17. G. S. Higashi, R. S. Becker, Y. J. Chabal, and A. J. Becker, Appl. Phys. Lett. 58, 1656 (1991).
18. Ultra Cleaning Technology, VLSI Ultra Clean Technol. Workshop 10 (1991), p. 91.
19. H. A. Macleud, Thin Film Optical Filters, 2nd ed. (Adam Hilger, U. K., 1986).
20. B. Harbecke, B. Heinz, and P. Grosse, Appl. Phys. A: Solids Surf. 38, 263 (1985).
21. P. Grosse, B. Harbecke, B. Heinz, R. Meyer, and M. Offenberg, Appl. Phys. A: Solids Surf. 39, 257 (1986).
22. R. Brendel, Appl. Phys. A: Solids Surf. 50, 587 (1990).
23. 2 Interface 2, edited by C. R. Helms, and B. E. Deal (Plenum, New York, 1993), p. 91.
24. K. B. Koller, W. A. Schmidt, and J. E. Butler, J. Appl. Phys. 64, 4704 (1988).
25. K. Ishikawa, H. Ogawa, and S. Fujimura, Mater. Res. Soc. Symp. Proc. 318, 425 (1994).
26. K. Ishikawa, H. Ogawa, C. Inomata, S. Fujimura, and H. Mori, in Control of Semiconductor Interface, edited by I. Ohdomari, M. Oshima, and A. Hiraki (Elsevier, Amsterdam, 1994), p. 447.
27. T. R. Steyer, K. L. Day, and D. R. Huffman, Appl. Opt. 13, 1586 (1974).
28. H. R. Philipp, Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic, San Diego, 1985), p. 749.
29. L. Genzel and T. P. Martin, Surf. Sci. 34, 33 (1973).
30. A. H. Carim and A. Bhattacharyya, Appl. Phys. Lett. 46, 872 (1985).
31. M. Niwa, H. Iwasaki, Y. Watanabe, I. Sumita, N. Akatsu, and Y. Akatsu, Appl. Surf. Sci. 60/61, 39 (1992).
32. E. Taft and L. Cordes, J. Electrochem. Soc. 126, 131 (1979).
33. D. E. Aspenes and J. B. Theeten, J. Electrochem. Soc. 127, 1359 (1980).
34. H. Ogawa and T. Hattori, IEICE Trans. Electron. E75-C, 774 (1992).
35. V. A. Yakovlev, Q. Liu, and E. A. Irene, J. Vac. Sci. Technol. A 10, 427 (1992).
36. V. A. Yakovlev, and E. A. Irene, J. Electrochem. Soc. 139, 1450 (1992).