Catalyst-free growth of GaN nanowires

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 576-580

  Bertness, K A ^a   Sanford, N A ^a   Barker, J M ^a   Schlager, J B ^a   Roshko, A ^a   Davydov, A V ^a   Levin, I ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Gallium nitride; Molecular beam epitaxy (MBE); Nanostructures; Nanotechnology

Indexed keywords

LUMINESCENCE INTENSITY; MATRIX LAYERS; METAL CATALYSTS; NANOWIRES; ROOM TEMPERATURE;

CATALYSTS; ELECTRIC FIELDS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; SILICON; SOLVENTS; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33646734722     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0102-4     Document Type: Conference Paper

References (15)

1. W. Seifert et al., J. Cryst. Growth 272, 211 (2004).
2. J.C. Johnson, H.-J. Choi, K.P. Knutsen, R.D. Schaller, P. Yang, and R.J. Saykally, Nat. Mater. 1, 106 (2002).
3. Z. Zhong, F. Qian, D. Wang, and C.M. Lieber, Nano Lett. 3, 343 (2003).
4. F. Qian, Y. Li, S. Gradecjak, D. Wang, C.J. Barrelet, and C.M. Lieber, Nano Lett. 4, 1975 (2004).
5. M.C. McAlpine, R.S. Friedman, S. Jin, K.-H. Lin, W.U. Wang, and C.M. Lieber, Nano Lett. 3, 1531 (2003).
6. J. Ristic, M.A. Sanchez-Garcia, E. Calleja, J. Sanchez-Paramo, J.M. Calleja, U. Jahn, and K.H. Ploog, Phys. Status Solidi A-Appl. Res. 192, 60 (2002).
7. Y.H. Kim, J.Y. Lee, S.-H. Lee, J.-E. Oh, and H.S. Lee, Appl. Phys. A: Mater. Sci. Process 80, 1635 (2005).
8. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, Jpn. J. Appl. Phys. Part 2 36, L459-62 (1997).
9. A. Kikuchi, M. Kawai, M. Tada, and K. Kishino, Jpn. J. Appl. Phys. Part 2 43, L1524-26 (2004).
10. R. Calarco, M. Marso, T. Richter, A.I. Aykanat, R. Meijers, A.V. Hart, T. Stoica, and H. Luth, Nano Lett. 5, 981 (2005).
11. K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, and A.V. Davydov, J. Cryst. Growth 287, 522 (2006).
12. R. Liu, F. A. Ponce, A. Dadgar, and A. Krost, Appl. Phys. Lett. 83, 860 (2003).
13. S. Porowski, J. Cryst. Growth 190, 153 (1998).
14. S. S. Park, I.-W. Park, and S. H. Choh, Jpn. J. Appl. Phys. Part 2 39, L1141-42 (2000).
15. E. Calleja, M.A. Sánchez-García, F.J. Sánchez, F. Calle, F.B. Naranjo, E. Muñoz, U. Jahn, and K. Ploog, Phys. Rev. B: Condens. Matter Mater. Phys. 62, 16826 (2000).