Surface band bending of a -plane GaN studied by scanning Kelvin probe microscopy

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Chevtchenko, S ^a   Ni, X ^a   Fan, Q ^a   Baski, A A ^a   Morko H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT SCANNING KELVIN PROBE MICROSCOPY; CHARGED SURFACE STATES; PLANE GAN; SURFACE BAND BENDING;

ENERGY GAP; LAYERED MANUFACTURING; MICROSCOPIC EXAMINATION; POLARIZATION; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR MATERIALS;

GALLIUM NITRIDE;

EID: 33645505384     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188589     Document Type: Article

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