Effects of surface plasma treatment on n-GaN ohmic contact formation

Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 499-503

  Li, L K ^a   Tan, L S ^a   Chor, E F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A1. Auger electron spectroscopy; A1. Ohmic contacts; A1. Plasma surface treatment; A1. X ray photoelectron spectroscopy; B1. Gallium nitride

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; ENERGY GAP; OHMIC CONTACTS; PLASMAS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE PLASMA TREATMENT; WIDE-BANDGAP MATERIALS;

GALLIUM NITRIDE;

EID: 3142760939     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.04.080     Document Type: Conference Paper

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