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Volumn 88, Issue 21, 2006, Pages

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION INTENSITY; GAN NANOWIRES; POLARIZATION ANISOTROPY; SAPPHIRE SUBSTRATES;

ANISOTROPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SIGNAL TO NOISE RATIO;

NANOSTRUCTURED MATERIALS;

EID: 33744534086 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2206133 Document Type: Article

Times cited : (67)

References (12)

1
- 0034670743
- E. Calleja, M. A. Sánchez-García, F. J. Sánchez, F. Calle, F. B. Naranjo, E. Muoz, U. Jahn, and K. Ploog, Phys. Rev. B 62, 16826 (2000).
- (2000) Phys. Rev. B , vol.62 , pp. 16826
- Calleja, E.¹ Sánchez-García, M.A.² Sánchez, F.J.³ Calle, F.⁴ Naranjo, F.B.⁵ Muoz, E.⁶ Jahn, U.⁷ Ploog, K.⁸

2
- 0036925679
- J. Ristíc, E. Calleja, M. A. Sánchez-García, J. M. Ulloa, E. Calleja, J. Sánchez-Páramo, J. M. Calleja, U. Jahn, A. Trampert, and K. H. Ploog, Phys. Status Solidi B 234, 717 (2002).
- (2002) Phys. Status Solidi B , vol.234 , pp. 717
- Ristíc, J.¹ Calleja, E.² Sánchez-García, M.A.³ Ulloa, J.M.⁴ Calleja, E.⁵ Sánchez-Páramo, J.⁶ Calleja, J.M.⁷ Jahn, U.⁸ Trampert, A.⁹ Ploog, K.H.¹⁰

3
- 0242608482
- J. Ristíc, E. Calleja, M. A. Sánchez-García, J. M. Ulloa, J. Sánchez-Páramo, J. M. Calleja, U. Jahn, A. Trampert, and K. H. Ploog, Phys. Rev. B 68, 125305 (2003).
- (2003) Phys. Rev. B , vol.68 , pp. 125305
- Ristíc, J.¹ Calleja, E.² Sánchez-García, M.A.³ Ulloa, J.M.⁴ Sánchez-Páramo, J.⁵ Calleja, J.M.⁶ Jahn, U.⁷ Trampert, A.⁸ Ploog, K.H.⁹

4
- 30344479164
- K. A. Bertness, A. Roshko, N. A. Sanford, J. M. Barker, and A. V. Davydov, J. Cryst. Growth 287, 522 (2006).
- (2006) J. Cryst. Growth , vol.287 , pp. 522
- Bertness, K.A.¹ Roshko, A.² Sanford, N.A.³ Barker, J.M.⁴ Davydov, A.V.⁵

5
- 33646422761
- K. A. Bertness, J. B. Schlager, N. A. Sanford, A. Roshko, T. E. Harvey, A. V. Davydov, I. Levin, M. D. Vaudin, J. M. Barker, P. T. Blanchard, and L. H. Robins, Mater. Res. Soc. Symp. Proc. 892, 799 (2005).
- (2005) Mater. Res. Soc. Symp. Proc. , vol.892 , pp. 799
- Bertness, K.A.¹ Schlager, J.B.² Sanford, N.A.³ Roshko, A.⁴ Harvey, T.E.⁵ Davydov, A.V.⁶ Levin, I.⁷ Vaudin, M.D.⁸ Barker, J.M.⁹ Blanchard, P.T.¹⁰ Robins, L.H.¹¹

6
- 0348112526
- M. C. McAlpine, R. S. Friedman, S. Jin, K.-H. Lin, W. U. Wang, and C. M. Leiber, Nano Lett. 3, 1531 (2003).
- (2003) Nano Lett. , vol.3 , pp. 1531
- McAlpine, M.C.¹ Friedman, R.S.² Jin, S.³ Lin, K.-H.⁴ Wang, W.U.⁵ Leiber, C.M.⁶

7
- 28144437037
- F. Qian, S. Gradečak, Y. Li, C.-Y. Wen, and C. M. Leiber, Nano Lett. 5, 2287 (2005).
- (2005) Nano Lett. , vol.5 , pp. 2287
- Qian, F.¹ Gradečak, S.² Li, Y.³ Wen, C.-Y.⁴ Leiber, C.M.⁵

8
- 3042835508
- H.-M. Kim, Y.-H. Cho, H. Lee, S. I. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, Nano Lett. 4, 1059 (2004).
- (2004) Nano Lett. , vol.4 , pp. 1059
- Kim, H.-M.¹ Cho, Y.-H.² Lee, H.³ Kim, S.I.⁴ Ryu, S.R.⁵ Kim, D.Y.⁶ Kang, T.W.⁷ Chung, K.S.⁸

9
- 20644450567
- M. A. Reshchikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 061301
- Reshchikov, M.A.¹ Morkoc, H.²

10
- 42749103845
- P. P. Paskov, T. Paskova, P. O. Holz, and B. Monemar, Phys. Rev. B 70, 035210 (2004).
- (2004) Phys. Rev. B , vol.70 , pp. 035210
- Paskov, P.P.¹ Paskova, T.² Holz, P.O.³ Monemar, B.⁴

11
- 0038044771
- S. Y. Bae, H. W. Seo, J. Park, H. Yang, H. Kim, and S. Kim, Appl. Phys. Lett. 82, 4564 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4564
- Bae, S.Y.¹ Seo, H.W.² Park, J.³ Yang, H.⁴ Kim, H.⁵ Kim, S.⁶

12
- 0004167140
- Springer, Berlin
- H. Morko̧, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
- (1999) Nitride Semiconductors and Devices
- Morko̧, H.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.