A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

Chemical Physics Letters

Volumn 427, Issue 1-3, 2006, Pages 107-112

  Lee, S Y ^a   Kim, T H ^a   Suh, D I ^a   Cho, N K ^a,b   Seong, H K ^c   Jung, S W ^b   Choi, H J ^c   Lee, S K ^a  

^a Chonbuk National University   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRODES; ELECTROPHORESIS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS;

AC ELECTRIC FIELDS; DIELECTROPHORESIS; GAN NANOWIRES; THREE-PROBE SCHEMES;

GALLIUM NITRIDE;

EID: 33746323993     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2006.05.133     Document Type: Article

References (13)

1. Xia Y., et al. Adv. Mater. 15 (2003) 3563
2. Goldberger J., He R., Zhang Y., Lee S.K., Yan H., Choi H.J., and Yang P. Nature 422 (2003) 599
3. Kar S., Ghoshal T., and Chaudhuri S. Chem. Phys. Lett. 419 (2006) 674
4. Acharya S., Panda A.B., Belman N., Efriman S., and Golan Y. Adv. Mater. 18 (2006) 210
5. Zheng L., Li S., Brody J.P., and Burke P.J. Langmuir 20 (2004) 8612
6. Pohl H.A. Dielectrophoresis (1978), Cambridge University Press, Cambridge, UK
7. Dong L., et al. J. Phys. Chem. B 109 (2005) 13148
8. Duan X., Cui Y., Wang J., and Lieber C.M. Nature 409 (2001) 66
9. Kumar S., Rajaraman S., Gerhardt R.A., Wang Z.L., and Hesketh P.J. Electrochim. Acta 51 (2005) 943
10. Lao C.S., Liu J., Gao P., Zhang L., Davidovic D., Tummala R., and Wang Z.L. Nanoletters 6 (2006) 263
11. Morgan H., and Green N.G. J. Electrostat. 42 (1997) 279
12. Streetman B.G., and Banerjee S. Solid State Electronic Device (2000), Prentice-Hall Inc., NJ, USA
13. .