The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires

Journal of Physics D: Applied Physics

Volumn 41, Issue 10, 2008, Pages

  Hwang, Chanoh ^a   Hyung, Jung Hwan ^b   Lee, Seung Yong ^b   Jang, Chan Oh ^b   Kim, Tae Hong ^b   Choi, Pyung ^a   Lee, Sang Kwon ^b  

^a Kyungpook National University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC LINES; GALLIUM NITRIDE; MATHEMATICAL MODELS; OHMIC CONTACTS;

SCHOTTKY METALS;

NANOWIRES;

EID: 43049089406     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/10/105103     Document Type: Article

References (27)

1. Xia Y, Yang P, Sun Y, Wu Y, Mayers B, Gates B, Yin Y, Kim F and Yan H 2003 Adv. Mater. 15 353
2. Lee S K, Kim T H, Lee S Y, Choi K C and Yang P 2007 Phil. Mag. 87 2105
3. Kuykendall T, Pauzauskie P, Lee S K, Zhang Y, Goldberger J and Yang P 2003 Nano. Lett. 3 1063
4. Lee S Y, Kim T H, Suh D I, Park J E, Kim J H, Youn C J, Ahn B K and Lee S K 2007 Physica E 36 104
5. Lee S Y, Kim T H, Suh D I, Suh E K., Cho N K, Seong W K and Lee S K 2007 Appl. Phys. A 87 739
6. Kim T H, Lee S Y, Cho N K, Seong H K, Choi H J, Jung S W and Lee S K 2006 Nanotechnology 17 3394
7. Cui Y, Zhong Z, Wang D, Wang W U and Lieber C M 2001 Nano. Lett. 3 149
8. Huang Y, Duan X, Cui Y, Lauhon L J, Kim K H and Lieber C M 2001 Science 294 1313
9. Huang Y, Duan X, Cui Y and Lieber C M 2002 Nano. Lett 2 101
10. Goldberger J, Sirbuly D J, Law M and Yang P 2005 J. Phys. Chem. B 109 9
11. Jin S, Whang D M, McAlpine M C, Friedman R S, Wu Y and Lieber C M 2004 Nano. Lett. 4 915
12. Mohney S E, Wang Y, Cabassi M A, Lew K K, Dey S, Redwing J M and Mayer T S 2005 Solid-State Electron. 49 227
13. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts 2nd edn (Oxford: Clarendon)
14. Salfi J, Philipose U, de Sousa C F, Aouba S and Ruda H E 2006 Appl. Phys. Lett. 89 261112
15. Lin M E, Ma Z, Huang F Y, Fan Z F, Allen L H and Morkoç H 1994 Appl. Phys. Lett. 64 1003
16. Hong S J and Kim K K 2006 Appl. Phys. Lett. 89 042101
17. Motayed A, Bathe R, Wood M C, Diouf O S, Vispute R D and Mohammad S N 2003 J. Appl. Phys. 93 1087
18. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
19. Kalinia E V, Kuznetsov N I, Dmitriev V A, Irvine K G and Carter C H Jr 1996 J. Electron Mater. 25 831
20. Hirsch M T, Duxstad K J and Haller E E 1997 Electron. Lett. 33 95
21. Hacke P, Detchprohm T, Hiramatsu K and Sawaki N 1993 Appl. Phys. Lett. 63 2676
22. Das S N and Pal A K 2007 J. Phys. D: Appl. Phys. 40 7291
23. Tung R T 1992 Phys. Rev. B 45 13509
24. Smit G D J, Rogge S and Klapwijk T M 2002 Appl. Phys. Lett. 81 3852
25. Smit G D J, Rogge S and Klapwijk T M 2002 Appl. Phys. Lett. 80 2568
26. Deb R, Kim H, Qin Y, Lahiji R, Oliver M, Reifenberger R and Sands T 2006 Nano. Lett. 6 2893
27. Lee S K, Zetterling C M, stling M, berg I, Magnusson M H, Deppert K, Wernersson L E, Samuelson L and Litwin A 2002 Solid-State Electron. 46 1433