SiC/Ti3SiC2 interface: Atomic structure, energetics, and bonding

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 4, 2009, Pages

  Wang, Zhongchang ^a   Tsukimoto, Susumu ^a   Saito, Mitsuhiro ^a   Ikuhara, Yuichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 60449106810     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.045318     Document Type: Article

References (68)

1. H. G. Bohn, J. M. Williams, C. J. McHargue, and G. M. Begun, J. Mater. Res. 2, 107 (1987). 10.1557/JMR.1987.0107
2. K. Shenai, R. S. Scott, and B. J. Baliga, IEEE Trans. Electron Devices 36, 1811 (1989). 10.1109/16.34247
3. T. P. Chow, V. Khemka, J. Fedison, N. Ramungal, K. Matocha, Y. Tang, and R. J. Gutmann, Solid-State Electron. 44, 277 (2000). 10.1016/S0038-1101(99) 00235-X
4. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994). 10.1063/1.358463
5. P. G. Neudeck, J. Electron. Mater. 24, 283 (1995). 10.1007/BF02659688
6. M. Ruff, H. Mitlehner, and R. Helbig, IEEE Trans. Electron Devices 41, 1040 (1994). 10.1109/16.293319
7. C. E. Weitzel, IEEE Electron Device Lett. 16, 451 (1995). 10.1109/55.464814
8. H. Hochst, D. W. Niles, G. W. Zajac, T. H. Fleisch, B. C. Johnson, and J. M. Meese, J. Vac. Sci. Technol. B 6, 1320 (1988). 10.1116/1.584257
9. C. E. Weitzel, J. W. Palmeur, C. Carter, K. Mooce, K. J. Mordquist, and S. Allen, IEEE Trans. Electron Devices 43, 1732 (1996). 10.1109/16.536819
10. Y. Singh and M. J. Kumar, IEEE Trans. Electron Devices 48, 2695 (2001). 10.1109/16.974692
11. R. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, and J. W. Palmour, IEEE Trans. Electron Devices 49, 665 (2002). 10.1109/16.992877
12. D. T. Morisette and J. A. Cooper, IEEE Trans. Electron Devices 49, 1657 (2002). 10.1109/TED.2002.801290
13. V. Khemka, V. Ananthan, and T. P. Chow, IEEE Electron Device Lett. 21, 286 (2000). 10.1109/55.843152
14. H. Yu, J. Lai, X. Li, Y. Luo, L. Fursin, and J. H. Zhao, Conf. Rec. Ind. Appl. Soc. IEEE IAS Annu. Meet. 10.1109/IAS.2002.1042815 4, 2609 (2002).
15. L. M. Porter and R. F. Davis, Mater. Sci. Eng., B 34, 83 (1995). 10.1016/0921-5107(95)01276-1
16. J. Crofton, L. M. Porter, and J. R. Williams, Phys. Status Solidi B 202, 581 (1997). 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO;2-M
17. O. Nakatsuka, T. Takei, Y. Koide, and M. Murakami, Mater. Trans. 43, 1684 (2002). 10.2320/matertrans.43.1684
18. K. Vassilevski, K. Zekentes, K. Tsagaraki, G. Constantinidis, and I. Nikitina, Mater. Sci. Eng., B 80, 370 (2001). 10.1016/S0921-5107(00)00597-3
19. R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama, and M. Murakami, Mater. Sci. Eng., B 98, 286 (2003). 10.1016/S0921-5107(03)00065-5
20. M. R. Jennings, A. Perez-Tomas, M. Davies, D. Walker, L. Zhu, P. Losee, W. Huang, S. Balachandran, O. J. Guy, J. A. Covington, T. P. Chow, and P. A. Mawby, Solid-State Electron. 51, 797 (2007). 10.1016/j.sse.2007.02.037
21. S. E. Mohney, B. A. Hull, J. Y. Lin, and J. Crofton, Solid-State Electron. 46, 689 (2002). 10.1016/S0038-1101(01)00327-6
22. S. Tsukimoto, K. Nitta, T. Sakai, M. Moriyama, and M. Murakami, J. Electron. Mater. 33, 460 (2004). 10.1007/s11664-004-0203-x
23. B. J. Johnson and M. A. Capano, J. Appl. Phys. 95, 5616 (2004). 10.1063/1.1707215
24. F. F. Zhao, Y. P. Feng, Y. F. Dong, and J. Z. Zheng, Phys. Rev. B 74, 033301 (2006). 10.1103/PhysRevB.74.033301
25. L. Pizzagalli, G. Cicero, and A. Catellani, Phys. Rev. B 68, 195302 (2003). 10.1103/PhysRevB.68.195302
26. M. W. Finnis, J. Phys.: Condens. Matter 8, 5811 (1996). 10.1088/0953-8984/8/32/003
27. T. Hong, J. R. Smith, and D. J. Srolovitz, Acta Metall. Mater. 43, 2721 (1995). 10.1016/0956-7151(94)00457-S
28. W. Liu, J. C. Li, W. T. Zheng, and Q. Jiang, Phys. Rev. B 73, 205421 (2006). 10.1103/PhysRevB.73.205421
29. K. Nagao, J. B. Neaton, and N. W. Ashcroft, Phys. Rev. B 68, 125403 (2003). 10.1103/PhysRevB.68.125403
30. G. Profeta, A. Continenza, and A. J. Freeman, Phys. Rev. B 64, 045303 (2001). 10.1103/PhysRevB.64.045303
31. Lu Wenchang, Zhang Kaiming, and Xie Xide, Phys. Rev. B 45, 11048 (1992). 10.1103/PhysRevB.45.11048
32. J. Hoekstra and M. Kohyama, Phys. Rev. B 57, 2334 (1998). 10.1103/PhysRevB.57.2334
33. M. Kohyama and J. Hoekstra, Phys. Rev. B 61, 2672 (2000). 10.1103/PhysRevB.61.2672
34. S. Tsukimoto, T. Sakai, and M. Murakami, J. Appl. Phys. 96, 4976 (2004). 10.1063/1.1797546
35. M. Gao, S. Tsukimoto, S. H. Goss, S. P. Tumakha, T. Onishi, M. Murakami, and L. J. Brillson, J. Electron. Mater. 36, 277 (2007). 10.1007/s11664-006-0078- 0
36. G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
37. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993). 10.1103/PhysRevB.47.558
38. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50. 17953
39. J. P. Perdew, J. A. Chevary, S. H. Vosko, K. A. Jackson, M. R. Pederson, D. J. Singh, and C. Fiolhais, Phys. Rev. B 46, 6671 (1992). 10.1103/PhysRevB.46. 6671
40. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
41. M. Methfessel and A. T. Paxton, Phys. Rev. B 40, 3616 (1989). 10.1103/PhysRevB.40.3616
42. P. Pulay, Chem. Phys. Lett. 73, 393 (1980). 10.1016/0009-2614(80)80396-4
43. D. Singh, Phys. Rev. B 40, 5428 (1989). 10.1103/PhysRevB.40.5428
44. O. Jepson and O. K. Andersen, Solid State Commun. 9, 1763 (1971). 10.1016/0038-1098(71)90313-9
45. P. E. Blöchl, O. Jepsen, and O. K. Andersen, Phys. Rev. B 49, 16223 (1994). 10.1103/PhysRevB.49.16223
46. M. C. Payne, M. P. Teter, D. C. Allan, T. A. Arias, and J. D. Joannopoulos, Rev. Mod. Phys. 64, 1045 (1992). 10.1103/RevModPhys.64.1045
47. R. P. Feynman, Phys. Rev. 56, 340 (1939). 10.1103/PhysRev.56.340
48. L. S. Ramsdell, Am. Mineral. 32, 64 (1947).
49. N. W. Jepps and T. F. Page, Prog. Cryst. Growth Charact. 7, 259 (1983). 10.1016/0146-3535(83)90034-5
50. R. W. G. Wyckoff, Crystal Structures, 2nd ed. (Interscience, New York, 1963), Vol. 1, p. 113.
51. A. Bauer, J. Kraublich, L. Dressler, P. Kuschnerus, J. Wolf, and K. Goetz, Phys. Rev. B 57, 2647 (1998). 10.1103/PhysRevB.57.2647
52. M. Y. Gamarnik and M. W. Barsoum, J. Mater. Sci. 34, 169 (1999). 10.1023/A:1004415018691
53. T. Goto and T. Hirai, Mater. Res. Bull. 22, 1195 (1987). 10.1016/0025-5408(87)90128-0
54. R. Ahuja, O. Eriksson, J. M. Wills, and B. Johansson, Appl. Phys. Lett. 76, 2226 (2000). 10.1063/1.126304
55. B. E. Wheeler, Solid State Commun. 4, 173 (1966). 10.1016/0038-1098(66) 90005-6
56. B. Baumeier, P. Krüger, and J. Pollmann, Phys. Rev. B 73, 195205 (2006). 10.1103/PhysRevB.73.195205
57. P. Käckell, B. Wenzien, and F. Bechstedt, Phys. Rev. B 50, 10761 (1994). 10.1103/PhysRevB.50.10761
58. W. Y. Ching, Y. N. Xu, P. Rulis, and L. Z. Ouyang, Mater. Sci. Eng., A 422, 147 (2006). 10.1016/j.msea.2006.01.007
59. M. S. Hybertsen and S. G. Louie, Phys. Rev. B 34, 5390 (1986). 10.1103/PhysRevB.34.5390
60. F. Bechstedt and R. Del-Sole, Phys. Rev. B 38, 7710 (1988). 10.1103/PhysRevB.38.7710
61. I. Shalish, I. B. Altfeder, and V. Narayanamurti, Phys. Rev. B 65, 073104 (2002). 10.1103/PhysRevB.65.073104
62. B. Kaczer, H. J. Im, J. P. Pelz, J. Chen, and W. J. Choyke, Phys. Rev. B 57, 4027 (1998). 10.1103/PhysRevB.57.4027
63. M. W. Barsoum and T. El-Raghy, J. Am. Ceram. Soc. 79, 1953 (1996). 10.1111/j.1151-2916.1996.tb08018.x
64. Y. C. Zhou and Z. M. Sun, J. Phys.: Condens. Matter 12, L457 (2000). 10.1088/0953-8984/12/28/102
65. N. I. Medvedeva, D. L. Novikov, and A. J. Freeman, Phys. Rev. B 58, 16042 (1998). 10.1103/PhysRevB.58.16042
66. H. Z. Zhang and S. Q. Wang, Acta Mater. 55, 4645 (2007). 10.1016/j.actamat.2007.04.033
67. C. M. Tanner, J. Choi, and J. P. Chang, J. Appl. Phys. 101, 034108 (2007). 10.1063/1.2432402
68. Y. Li, L. Ye, and X. Wang, Surf. Sci. 600, 298 (2006). 10.1016/j.susc.2005.10.029