An IGBT and MOSFET gated SiC bipolar junction transistor

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 4, Issue , 2002, Pages 2609-2613

  Yu, Huijie ^a   Lai, Jason ^a   Li, X ^b   Luo, Y ^b   Fursin, L ^b   Zhao, J H ^b   Alexandrov, P ^c   Wright, B ^c   Weiner, M ^c  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c UNITED SILICON CARBIDE INC   (United States)

Author keywords

Base Drive; BJT; Darlington; IMGT; Silicon Carbide

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC DRIVES; MOSFET DEVICES; SILICON CARBIDE; SWITCHING;

BIPOLAR JUNCTION TRANSISTORS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0036443331     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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