Ab initio calculations of the β-SiC(001)/Al interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 4, 1998, Pages 2334-2341

  Hoekstra, J ^a   Kohyama, M ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000590516     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.2334     Document Type: Article

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