Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 460-466

  Tsukimoto, S ^a   Nitta, K ^a   Sakai, T ^a   Moriyama, M ^a   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Microstructure; Ohmic contact; P type 4H SiC; Ti 3SiC2; TiAl based

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROSTRUCTURE; MORPHOLOGY; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMAL CONDUCTIVITY; X RAY DIFFRACTION ANALYSIS;

P-TYPE 4H-SIC; TI3SIC2; TIAL-BASED;

TITANIUM ALLOYS;

EID: 2442648160     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0203-x     Document Type: Conference Paper

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