A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2695-2700

  Singh, Yashvir ^b   Kumar, M Jagadesh ^a,b  

^a IEEE

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Barrier lowering; Lateral Schottky; Numerical simulation; Silicon carbide

Indexed keywords

ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; THERMIONIC EMISSION;

LATERAL MERGED DOUBLE SCHOTTKY (LMDS) RECTIFIERS;

SOLID STATE RECTIFIERS;

EID: 0035691659     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974692     Document Type: Article

References (12)

1. A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier
2. Junction barrier Schottky diodes in 4H-SiC and 6H-SiC
3. SiC merged pn/Schottky rectifiers for high voltage applications
4. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC
5. Novel lateral merged double Schottky (LMDS) rectifier: Proposal and design
6. Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts
7. Reverse leakage current calculations for SiC Schottky contacts
8. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
9. Design considerations and experimental analysis for silicon carbide power rectifiers
10. Effect of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts