Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1657-1664

  Morisette, Dallas T ^b   Cooper Jr , James A ^a,c  

^a IEEE

^b OptoLynx Inc   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

Power electronics; Power semiconductor diodes; Schottky diodes

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; LEAKAGE CURRENTS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SWITCHING CIRCUITS; VOLTAGE MEASUREMENT;

PIN DIODES; POWER DISSIPATION; REVERSE VOLTAGE;

SEMICONDUCTOR DIODES;

EID: 0036712534     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801290     Document Type: Article

References (6)

1. Silicon carbide buried-gate junction field effect transistors for high-temperature power electronic applications
2. Conductivity anisotropy in epitaxial 6H and 4H-SiC
3. Ionization rates and critical fields in 4H silicon carbide
4. Development of robust power schottky barrier diodes in silicon carbide