Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 797-801

  Jennings, M R ^a   Perez Tomas A ^a   Davies, M ^a   Walker, D ^a   Zhu, L ^b   Losee, P ^b   Huang, W ^b   Balachandran, S ^b   Guy, O J ^c   Covington, J A ^a   Chow, T P ^b   Mawby, P A ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

4H SiC; Aluminium; Nickel; Ohmic contact; p type; SEM; Titanium; WDA; XRD

Indexed keywords

ALUMINUM; CONTACT RESISTANCE; NICKEL; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; TITANIUM; WAVELENGTH DISPERSIVE SPECTROSCOPY; X RAY DIFFRACTION;

METALLISATION STRUCTURES; P-TYPE CONTACTS; WAVELENGTH DISPERSIVE ANALYSIS (WDA);

SILICON CARBIDE;

EID: 34248587757     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.037     Document Type: Article

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