Fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 286-288

  Khemka, V ^a   Ananthan, V ^b   Chow, T P ^b  

^a MOTOROLA INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MOS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

TRENCH METAL OXIDE SEMICONDUCTOR BARRIER SCHOTTKY (TMBS) RECTIFIERS;

SOLID STATE RECTIFIERS;

EID: 0033737765     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843152     Document Type: Article

References (8)

1. T. P. Chow, N. Ramungul, and M. Ghezzo, "Wide bandgap semiconductor power devices," in Proc. Power Semiconductor Materials and Devices Symposium, Mater. Res. Soc., S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, and S. Tenconi, Eds., 1997, pp. 89-102.
2. Q. Wahab et al., "A 3 kV Schottky barrier diode in 4H-SiC," Appl. Phys. Lett., vol. 72, pp. 445-447, 1998.
3. R. Singh et al., "4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltages," in 56th Annu. Device Research Conf. Dig., Charlottesville, VA, 1998.
4. F. Dahlquist, C. M. Zetterling, M. Ostling, and K. Rottner, "Junction barrier Schottky diodes in 4H-SiC and 6H-SiC," in Proc. Int. Conf. on Silicon Carbide and Related Materials., Stockholm, Sweden, Sept. 1997, pp. 1061-1064.
5. K. J. Schoen et al., "A dual-metal-trench (DMT) Schottky pinch-rectifier in 4H-SiC," IEEE Electron Device Lett., vol. 19, pp. 97-99, 1998.
6. M. Mehrotra and B. J. Baliga, "Trench MOS Barrier Schottky (TMBS) rectifier," Solid-State Electron., vol. 38, pp. 703-713, 1995.
7. V. Khemka, T. P. Chow, and R. J. Gutmann, "Effect of reactive ion etch-induced damage on the peformance of 4H-SiC Schottky barrier diodes," J. Electron. Mater., vol. 27, pp. 1128-1135, 1998.
8. V. Khemka et al., "Static and dynamic characteristics of 1100 V, double-implanted, planar 4H-SiC PIN rectifier," in Proc. Int. Symp. Power Semiconductor Devices and ICs, Toronto, Ont., Canada, 1999.