The electronic structure and spectroscopic properties of 3C, 2H, 4H, 6H, 15R and 21R polymorphs of SiC

Materials Science and Engineering: A

Volumn 422, Issue 1-2, 2006, Pages 147-156

  Ching, W Y ^a   Xu, Yong Nian ^a   Rulis, Paul ^a   Ouyang, Lizhi ^a  

^a UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

Author keywords

Band structure; Optical properties; SiC 3C, 2H, 4H, 6H, 15R and 21R polymorphs

Indexed keywords

BAND STRUCTURE; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; SPECTROSCOPIC ANALYSIS; STACKING FAULTS;

BOND ORDER VALUES; MULLIKEN EFFECTIVE CHARGES; PARTIAL DENSITY OF STATES; POLYMORPHS; STACKING SEQUENCES; X-RAY ABSORPTION NEAR EDGE SPECTROSCOPY;

SILICON CARBIDE;

BAND STRUCTURE; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; STACKING FAULTS;

EID: 33645926701     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.01.007     Document Type: Article

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