Interface states in abrupt SiO2/4H- and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1297-1300

  Ohnuma, T ^a   Tsuchida, H ^a   Jikimoto, T ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

First principles Calculation; Interface States

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; COMPUTER SIMULATION; HYDROGEN; MATHEMATICAL MODELS; MOS DEVICES;

FIRST PRINCIPLE CALCULATION; INTERFACE STATES; SIO2/SIC INTERFACE;

SILICON CARBIDE;

EID: 8644258458     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (6)

1. J. A. Cooper, Jr., Phys. Stat. Sol. (a) 162 (1997) p. 305
2. J. Tan, M. K. Das, J. A. Cooper, Jr., and M. R. Melloch, Appl. Phys. Lett. 70 (1997) p. 2280
3. J. N. Shenoy, G. L. Chindalore, M.R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K.G. Irvine, J. Electron. Mater. 24 (1995) p. 303
4. G. Kresse and J. Furthmüller, Phys. Rev. B 54, (1996) p. 11169
5. V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz, Phys. Stat. Sol. (a) 162 (1997) p. 321
6. G. Pensl, M. Bassler, F. Ciobanu, V. Afanas'ev, H. Yano, T. Kimono, H. Matsunami, Mat. Res. Soc. Symp. Proc. Vo. 640, H3.2.1 (2001)