Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Avice, Marc ^b   Grossner, Ulrike ^a   Pintilie, Ioana ^b   Svensson, Bengt G ^b   Nilsen, Ola ^b   Fjellvag, Helmer ^b  

^a UNIVERSITY OF OSLO   (Norway)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; BAND STRUCTURE; DIELECTRIC RELAXATION; ELECTRIC CONDUCTANCE; ELECTRODEPOSITION; INTERFACES (MATERIALS); SILICON CARBIDE;

ATOMIC LAYER DEPOSITION; CONDUCTION BANDS; NEAR INTERFACE TRAPS; THERMAL DIELECTRIC RELAXATION;

ELECTRON TRAPS;

EID: 33751571646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387978     Document Type: Article

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