Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 443-446

  Hatakeyama, T ^a   Watanabe, T ^a   Kushibe, M ^a   Kojima, K ^c   Imai, S ^a   Suzuki, T ^c   Shinohe, T ^a   Tanaka, T ^c   Arai, K ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NONE

Author keywords

4H SiC; Anisotropy; Carrier Concentration; Device Simulator; Mobility; Mobility Model

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN;

HALL MOBILITY;

SILICON CARBIDE;

EID: 18744428809     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.443     Document Type: Conference Paper

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