Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2018-2023

  Vathulya, Vickram R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTANCE; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HEAT TREATMENT; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; THERMAL CONDUCTIVITY; THRESHOLD VOLTAGE;

BANDTAIL STATES; CHANNEL MOBILITY; DIMOS DEVICE;

MOSFET DEVICES;

EID: 0034318735     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877161     Document Type: Article

References (17)

1. P. G. Neudeck, "Progress in silicon carbide semiconductor electronics technology," J. Elec. Mater., vol. 24, pp. 283-288, 1995.
2. J. Spitz, M. R. Melloch, J. A. Cooper Jr., and M. A. Capano, "2.6 kV 4H-S1C lateral DMOSFET's," IEEE Electron Device Lett., vol. 19, pp. 100-102, 1998.
3. S. Kobayashi, T. Kimoto, and H. Matsunami, "Effects of channel mobility on SiC power metal-oxide-semiconductor field effect transistor performance,"/p. J. Appl. Phys., vol. 35, pp. 3331-3333, 1996.
4. V. R. Vathulya, H. Shang, and M. H. White, "A novel 6H-S1C power DMOSFET with implanted P-well spacer," IEEE Electron Device Lett., vol. 20, pp. 354-356, 1999.
5. A. Agarwal and N. Saks, private communication.
6. J. A. Pals, "Experimental verification of the surface quantization of a ra-type inversion layer of silicon at 300 and 77 K," Phys. Rev. B, vol. 5, pp. 4208-210, 1972.
7. Y. C. Cheng and E. A. Sullivan, "On the role of scattering by surface roughness in silicon inversion layers," Surf. Sci., vol. 34, pp. 717-731, 1973.
8. T. J. Krutsick, M. H. White, H.-S. Wong, and R. V. Booth, "An improved method of MOSFET modeling and parameter extraction," IEEE Trans. Electron Devices, vol. 34, pp. 1676-1680, 1987.
9. E. Bano, T. Ouisse, S. P. Scharnholz, A. Golz, and E. G. Stein von Kamienski, "Analytical modeling of thermally-activated transport in SiC inversion layers," Electron. Lett., vol. 33, pp. 243-245, 1997.
10. D. M. Brown et al., "SiC MOS interaface characteristics," IEEE Trans. Electron Devices, vol. 41, pp. 618-620, 1994.
11. S.SridevanandB. J. Baliga, "Lateral N-channel inversion mode4H-SiC MOSFETs," IEEE Electron Device Lett., vol. 19, pp. 228-230, 1998.
12. M. K. Das, J. A. Cooper, M. R. Melloch, and M. A. Capano, "Inversion channel mobility in 4H and 6H-S1C MOSFETs," in Proc. 1998 IEEE Semiconductor Interface Specialists Conf..
13. N. S. Saks, A. K. Agarwal.andS. S. Mani, "Characterization of electron mobility in 6H-S1C MOSFETs," in Proc. 1998 IEEE Semiconductor Interface Specialists Conf..
14. E. Arnold, N. Ramungul, T. P. Chow, and M. Ghezzo, "Interface states and field-effect mobility in 6H-SiC MOS transistors," in Proc. 7th Int. Conf. SiC and Related Materials, 1997, pp. 1013-1016.
15. R. Schorner, P. Friedrichs, and D. Peters, "Detailed investigation of N-channel enhancement 6H-S1C MOSFETs," IEEE Trans. Electron Devices, vol. 46, pp. 533-541, 1999.
16. E. Arnold, "Disorder-induced carrier localization in silicon surface inversion layers," Appl. Phys. Lett., vol. 25, pp. 705-707, 1974.
17. H. Yano, F Katafuchi, T. Kimoto, and H. Matsunami, "Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO2/SiC MOS system and MOSFET's," IEEE Trans. Electron Devices, vol. 46, pp. 504-510, 1999.