Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 617-620

  Bahng, W ^a   Song, G H ^a   Kim, N K ^a   Kim, S C ^a   Seo, K S ^a   Kim, H W ^a   Kim, E D ^a  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Activation; Anneal; Damage; Implantation; Morphology; SiC

Indexed keywords

ACTIVATION ANALYSIS; ALUMINUM; ANNEALING; ION IMPLANTATION; MICROSCOPIC EXAMINATION; SURFACE PROPERTIES;

DAMAGE RELAXATION;

SILICON CARBIDE;

EID: 0242581008     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.617     Document Type: Conference Paper

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