Ion implantation processing and related effects in SiC

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 781-786

  Svensson, B G ^a   Hallen A ^b   Wong Leung, J ^c   Janson, M S ^b   Linnarsson, M K ^b   Kuznetsov, A Yu ^a   Alfieri, G ^a   Grossner, U ^a   Monakhov, E V ^a   Nielsen, H K ^b   Jagadish, C ^c   Grillenberger, J ^d  

^a UNIVERSITY OF OSLO   (Norway)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

Doping; Dynamic annealing; Implantation; Ion flux; Profile simulation

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; SILICON CARBIDE;

DYNAMIC ANNEALING; ION FLUX; PROFILE SIMULATION;

ION IMPLANTATION;

EID: 33845604723     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.781     Document Type: Conference Paper

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