SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 229-233

A robust process for ion implant annealing of SIC in a low-pressure silane ambient

(6) Rao, S a Saddow, S E a Bergamini, F b Nipoti, R b Emirov, Y a Agrawal, Anant c

a UNIVERSITY OF SOUTH FLORIDA (United States)

b CNR (Italy)

c Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRON MICROSCOPY; ION IMPLANTATION; MORPHOLOGY; PRESSURE EFFECTS; SILANES; SURFACE PROPERTIES;

CARRIER GASES; DOPANTS; RF INDUCTION; SECONDARY ELECTRON MICROSCOPY (SEM);

SILICON CARBIDE;

EID: 12744281520 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-815-j1.5 Document Type: Conference Paper

Times cited : (5)

References (8)

1
- 0036571865
- Step bunching fabrication constraints in silicon carbide
- G. J. Phelps, N.G. Wright, E.G. Chester, C. M. Johnson and A.G. O'Neil, "Step bunching fabrication constraints in silicon carbide", Semicond. Sci. Technol. 17, L17 (2002).
- (2002) Semicond. Sci. Technol. , vol.17
- Phelps, G.J.¹ Wright, N.G.² Chester, E.G.³ Johnson, C.M.⁴ O'Neil, A.G.⁵

2
- 0001259360
- Dopant activation and surface morphology of ion implanted 4H- And 6H-silicon carbide
- M. Capano, S. Ryu, M. R. Melloch, J. A. Cooper, and M. R. Buss, "Dopant activation and surface morphology of ion implanted 4H- and 6H-Silicon Carbide," J. Electron. Mater. 27, 370 (1998).
- (1998) J. Electron. Mater. , vol.27 , pp. 370
- Capano, M.¹ Ryu, S.² Melloch, M.R.³ Cooper, J.A.⁴ Buss, M.R.⁵

3
- 36449002178
- Activation of ion implanted dopants in α-SiC
- S. Ahmed, C.J. Barbero, and T.W. Sigmon, "Activation of ion implanted dopants in α-SiC", Appl. Phys. Lett. 66, 712(1995).
- (1995) Appl. Phys. Lett. , vol.66 , pp. 712
- Ahmed, S.¹ Barbero, C.J.² Sigmon, T.W.³

4
- 21544453299
- Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H-SiC
- 1998
- Seshadri S, Eldridge G W and Agarwal A K 1998, "Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H-SiC", Appl. Phys. Lett. 72, 2026 (1998).
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2026
- Seshadri, S.¹ Eldridge, G.W.² Agarwal, A.K.³

5
- 0032634979
- Surface roughening in ion implanted 4H-Silicon Carbide
- M. Capano, S. Ryu, M. R. Melloch, J. A. Cooper, K. Rottner, S. Karlsson, N. Nordell, A. Powell and D. E. Walker, "Surface roughening in ion implanted 4H-Silicon Carbide", J. of Electron. Mater. 28, 214 (1999).
- (1999) J. of Electron. Mater. , vol.28 , pp. 214
- Capano, M.¹ Ryu, S.² Melloch, M.R.³ Cooper, J.A.⁴ Rottner, K.⁵ Karlsson, S.⁶ Nordell, N.⁷ Powell, A.⁸ Walker, D.E.⁹

6
- 0001208347
- AlN as an encapsulate for annealing SiC
- K.A. Jones et al., "AlN as an encapsulate for annealing SiC," J. Appl. Phys. 83, 8010 (1998)
- (1998) J. Appl. Phys. , vol.83 , pp. 8010
- Jones, K.A.¹

7
- 85087225559
- +/n 4H-SiC diodes
- submitted to August 31-Sepetember 4, Bologna, Italy
- th European Conf. on Silicon Carbide and Related Materials (ECSCRM2004), August 31-Sepetember 4, 2004, Bologna, Italy.
- (2004) th European Conf. on Silicon Carbide and Related Materials (ECSCRM2004)
- Bergamini, F.¹ Rao, S.² Poggi, A.³ Saddow, S.E.⁴ Nipoti, R.⁵ Agarwal, A.⁶

8
- 12744275726
- SRIM download at the web page: http://www.srim.org/SRIM
- SRIM Download at the Web Page

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.