Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 363-367

  Panknin, D ^a   Wirth, H ^a   Mucklich A ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Aluminium; Electrical efficiency; Implantation; Microstructure; Silicon carbide

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION;

ELECTRICAL EFFICIENCY;

SILICON CARBIDE;

EID: 0032652917     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00535-2     Document Type: Article

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