Control of Al-implantation doping in 4H-SiC

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 362-365

  Pernot, J ^a   Camassel, J ^a   Contreras, S ^a   Robert, J L ^a   Bluet, J M ^b   Michaud, J F ^b   Billon, T ^b  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

4H SiC; Aluminum implantation; Hall effect measurements; Infrared reflectivity

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; ION IMPLANTATION; PROCESS CONTROL; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

ALUMINUM IMPLANTATION;

SILICON CARBIDE;

EID: 0035932294     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00601-2     Document Type: Article

References (21)

1. Infrared investigation of implantation damage and implantation damage annealing in 4H-SC
2. Doping of Silicon Carbide by Ion Implantation