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Volumn 28, Issue 3, 1999, Pages 214-218

Surface roughening in ion implanted 4H-silicon carbide

(9) Capano, M A a Ryu, S a Cooper Jr , J A a Melloch, M R a Rottner, K b Karlsson, S b Nordell, N b Powell, A c Walker Jr , D E d

a PURDUE UNIVERSITY (United States)

b IMC (Sweden)

c Epitronics (United States)

d AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; ION IMPLANTATION; MORPHOLOGY; ROUGHNESS MEASUREMENT; SILANES; SILICON CARBIDE; SURFACE ROUGHNESS;

TIME-DEPENDENT ACTIVATION ENERGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032634979 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-999-0016-z Document Type: Article

Times cited : (107)

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- Calculations of damage profiles were made by integrating the product of scattering cross section and a displacement function over energy and distance. These results will be published elsewhere
- Calculations of damage profiles were made by integrating the product of scattering cross section and a displacement function over energy and distance. These results will be published elsewhere.

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