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Volumn 178, Issue 1-4, 2001, Pages 269-274
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Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields
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Author keywords
Computer simulation; Defect production; Influence of stress; Ion beam synthesis; Kinetics of defects
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Indexed keywords
ALUMINUM;
ANNEALING;
COMPUTER SIMULATION;
DEFECTS;
ION IMPLANTATION;
NITROGEN;
RESIDUAL STRESSES;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
DEFECT EVOLUTION;
ION BEAM SYNTHESIS;
SILICON CARBIDE;
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EID: 0035338059
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(00)00476-6 Document Type: Conference Paper |
Times cited : (4)
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References (14)
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