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Volumn 178, Issue 1-4, 2001, Pages 269-274

Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields

Author keywords

Computer simulation; Defect production; Influence of stress; Ion beam synthesis; Kinetics of defects

Indexed keywords

ALUMINUM; ANNEALING; COMPUTER SIMULATION; DEFECTS; ION IMPLANTATION; NITROGEN; RESIDUAL STRESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 0035338059     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00476-6     Document Type: Conference Paper
Times cited : (4)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.