Effect of plasma density and uniformity, electron temperature, process gas, and chamber on electron shading damage

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1999, Pages 25-28

  Siu, Stanley ^a   Patrick, Roger ^a   Vahedi, Vahid ^a   Alba, Simone ^a   Valentini, Grazia ^a   Colombo, Paolo ^a  

^a LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; ELECTRONS; GATES (TRANSISTOR); MATHEMATICAL MODELS; PLASMA DENSITY; PLASMA INTERACTIONS; SILICON WAFERS; TEMPERATURE;

ELECTRON SHADING DAMAGE; ELECTRON TEMPERATURE; FLASH MEMORY PROCESS; PLASMA UNIFORMITY;

PLASMA ETCHING;

EID: 0033323241     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (15)