Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 178-183

  Eriguchi, K ^a   Yamada, T ^a   Kosaka, Y ^a   Niwa, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TUNNELING; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTING SILICON; SILICA;

CONSTANT VOLTAGE STRESS; PLASMA PROCESS INDUCED DAMAGE;

ULTRATHIN FILMS;

EID: 0030707227     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)