Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides

Applied Physics Letters

Volumn 73, Issue 14, 1998, Pages 1985-1987

  Eriguchi, Koji ^a   Niwa, Masaaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006862550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122343     Document Type: Article

References (20)

1. J. W. McPherson and D. A. Baglee, J. Electrochem. Soc. 132, 1903 (1985).
2. C. Monserie, P. Mortini, G. Ghibaudo, and G. Pananakakis, Qual. Reliab. Eng. Int. 9, 321 (1993).
3. W. W. Abadeer and R. P. Vollertsen, Qual. Reliab. Eng. Int. 12, 287 (1996).
4. C.-F. Chen, C.-Y. Wu, M.-K. Lee, and C.-N. Chen, IEEE Trans. Electron Devices ED-34, 1540 (1987).
5. R. Moazzami, J. C. Lee, and C. Hu, IEEE Trans. Electron Devices ED-36, 2462 (1989).
6. J. S. Seuhle and P. Chaparala, IEEE Trans. Electron Devices 44, 801 (1997).
7. H. Satake, N. Yasuda, S. Takagi, and A. Toriumi, Appl. Phys. Lett. 69, 1128 (1996).
8. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
9. L. K. Han, M. Bhat, D. Wristers, J. Fulford, and D. L. Kwong, Tech. Dig. Int. Electron Devices Meet. 1994, 617.
10. S.-H. Lee, B.-J. Cho, J.-C. Kim, and S.-H. Choi, Tech. Dig. Int. Electron Devices Meet. 1994, 605.
11. J. Prendergast, J. Suehle, P. Chaparala, E. Murphy, and M. Stephenson, Proceedings of International Reliability Physics Symposium, 1995 (unpublished), p. 124.
12. I.-C. Chen, S. E. Holland, and C. Hu, IEEE Trans. Electron Devices ED-32, 413 (1985).
13. B. E. Weir, P. J. Silverman, D. Monroe, K. S. Krish, M. A. Alam, G. B. Alers, T. W. Sorsch, G. L. Timp, F. Baumann, C. T. Liu, Y. Ma, and D. Hwang, Tech. Dig. Int. Electron Devices Meet. 1997, 605.
14. H. Satake and A. Toriumi, Proceedings of International Reliability Physics Symposium, 1997 (unpublished), p. 156.
15. D. Arnold, E. Cartier, and D. J. DiMaria, Phys. Rev. B 49, 10278 (1994).
16. D. L. Griscom, J. Appl. Phys. 58, 2524 (1985).
17. G. Van den bosch, G. Groeseneken, and H. E. Maes, J. Appl. Phys. 74, 5582 (1993).
18. R. Gale, F. J. Feigl, C. W. Magee, and D. R. Young, J. Appl. Phys. 54, 6938 (1983).
19. -2, after the electron injection from the gate electrode at 100°C.
20. C. Kaneta, Proceedings of the 53rd Symposium on Semiconductors and Integrated Circuits Technology, 1997 (unpublished), p. 94.