Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 527-529

  Tzeng, Pei Jer ^b   Chang, Yi Yuan ^b   Chang Liao, Kuei Shu ^a,b  

^a IEEE

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Gate insulator; High dielectric constant material; MOS device; Plasma charging effect

Indexed keywords

DIELECTRIC FILMS; ELECTRIC INSULATORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR PLASMAS; SILICON NITRIDE; TANTALUM COMPOUNDS; ULSI CIRCUITS;

GATE INSULATOR; HIGH DIELECTRIC CONSTANT MATERIAL; PLASMA CHARGING DAMAGE; TANTALUM OXIDE;

MOS DEVICES;

EID: 0035506623     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962652     Document Type: Article

References (16)

1. Ultra-thin gate oxides-performance and reliability
2. Making silicon nitride a viable gate dielectric
3. 5 gate dielectric prepared by in-situ rapid thermal processing
4. 5 gate dielectric
5. ox,eq < Å
6. Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
7. 5 gate dielectrics utilizing water assisted deposition (WAD) for sub 50 nm damascene metal gate MOSFETs
8. 5
9. Plasma charging damage: An overview
10. Improved immunity to plasma damage in ultrathin nitrided oxides
11. Identification of plasma-induced damage conditions in VLSI designs
12. How plasma etching damages thin gate oxides
13. 2O ambient
14. 2O RTA treatment
15. Low voltage tunneling in ultra-thin oxides: A monitor for interface states and degradation