Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

Applied Physics Letters

Volumn 87, Issue 12, 2005, Pages 1-3

  Choi, Rino ^a   Song, S C ^a   Young, C D ^a   Bersuker, Gennadi ^a   Lee, Byoung Hun ^b  

^a SEMATECH   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GATE DIELECTRICS; INVERSION PULSE MEASUREMENTS;

DIELECTRIC MATERIALS; MOSFET DEVICES; PERMITTIVITY; RAPID THERMAL ANNEALING; STRESS ANALYSIS; THRESHOLD VOLTAGE;

HAFNIUM COMPOUNDS;

EID: 28344448488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2043252     Document Type: Article

References (9)

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