Mechanisms for junction degradation of advanced MOSFETs induced by plasma processing

Proceedings 2007 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2007, Pages 117-120

  Kamei, Masayuki ^a   Eriguchi, Koji ^a   Okada, Kenji ^b   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Capacitance; Damage; High k gate stack; Junction; MOSFET; Plasma

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; SULFATE MINERALS;

HIGH K GATE STACKS; INTEGRATED CIRCUIT (IC) DESIGN; INTERNATIONAL CONFERENCES; JUNCTION DEGRADATION; MOSFETS; PLASMA PROCESSING;

INTEGRATED CIRCUITS;

EID: 47349130705     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2007.4299553     Document Type: Conference Paper

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